Fast reversible laser-induced crystallization of Sb-rich Zn-Sb-Se phase change material with excellent stability

Abstract

We present a new reversible phase-change medium Sb-rich Zn-Sb-Se film, which possesses a large difference in both optical and electrical constant. The doped-ZnSb, sub-formed Zn-Se, and exhausted Sb-Se3/2 co-influence the physical properties. Typically, there is ∼105 resistance ratio and ∼14% relative reflectivity change in Zn19Sb45.7Se35.3 film when switched by electricity or laser pulses between amorphous and crystalline states. The higher Tc (∼250°C), larger Ea (∼8.57eV), better 10-yr data retention (∼200.2°C), higher crystallization resistance (∼3 × 103Ω/□ at 300°C-annealled) and relative lower melting temperature (∼550.2°C) are exhibited in Zn19Sb45.7Se35.3 film. Importantly, a short crystalline time (∼80ns at 70mW) of the ideal Zn19Sb45.7Se35.3 film can be obtained without sacrificing room-temperature stability.