High-yield Micro-LED laser transfer accomplished using an ablation-type release material

Abstract

Micro light-emitting diode (Micro-LED) is a highly promising technology in the field of new displays, with the mass transfer process involved in its manufacturing process widely regarded as a major barrier to their further development. This study adopts laser transfer technology as the primary solution, using ablation-type transfer release materials that improve chip utilization rates over blister-type release materials. In addition, measurement of the laser transfer parameters, inspection, and laser repair technology are combined to achieve a transfer yield of about 100% to the carrier substrate and a cumulative transfer displacement of less than 1 µm in the Micro-LED inverted chip array. Furthermore, cleaning agents were used to remove adhesive residue from the receiving substrate after transfer, improving the bonding yield between the chip and the thin film transistor driver circuit board. This study provides a feasible solution for Micro-LED mass transfer, which could boost its further development toward commercial application.