Thermal mathematical model of semiconductor devices for measurement of current-voltage characteristics by pulse method

Abstract

The thermal mathematical model is used to estimate self-heating of semiconductor devices of various types during current-voltage characteristics measuring by the pulse method. The influence of self-heating on electrical parameters of semiconductor devices is analyzed. The recommendations for determination of values of measuring pulse sequence parameters are formulated to minimize self-heating of semiconductor structure.

Keywords

• current-voltage characteristics
• semiconductor device
• pulse method of measurement
• thermal model