Experimental estimation of oxidation-induced Si atoms emission on Si(001) surfaces

Abstract

Kinetics of Si atoms emission during the oxidation of Si(001) surfaces have been investigated using reflection high energy electron diffraction combined with Auger electron spectroscopy. The area ratio of the 1 × 2 and the 2 × 1 domains on a clean Si(001) surface changed with the oxidation of the surface by Langmuir-type adsorption. This change in the domain ratio is attributed to the emission of Si atoms. We can describe the changes in the domain ratio using the Si emission kinetics model, which states that (1) the emission rate is proportional to the oxide coverage, and (2) the emitted Si atoms migrate on the surface and are trapped at SB steps. Based on our model, we find experimentally that up to 0.4 ML of Si atoms are emitted during the oxidation of a Si(001) surface at 576 °C.