Large-Scale Synthesis h-BN Films on Copper-Nickel Alloy by Atmospheric Pressure Chemical Vapor Deposition

Abstract

Due to its high thermal and chemical stability, excellent dielectric properties, unique optical properties, corrosion resistance, and oxidation resistance, the two-dimensional hexagonal boron nitride (h-BN) is often used in a thermal conductor protective layer in deep ultraviolet light-emitting detector fields. However, due to the complicated growth conditions of h-BN, it is often necessary to prepare h-BN by the CVD method in a high vacuum environment, which is limited to a certain extent in terms of film size and production cost. In order to solve this problem, we proposed a method to prepare h-BN thin films by atmospheric CVD (APCVD). This method does not need a vacuum environment, which reduces energy consumption and cost, and makes the operation simpler and the experimental environment safer. The preparation of high-quality h-BN film was carried out using a Cu-Ni alloy as the growth substrate. The growth process of h-BN film was studied, and the influence of growth parameters on the structure of the h-BN film was explored. The morphological features and elemental composition pairs of the samples were characterized and analyzed, which confirmed that the high-quality h-BN film could be successfully grown on the Cu-Ni alloy substrate by APCVD. The UV detection device prepared by using the prepared h-BN film as the photoresponse material had good photoresponse characteristics and performance stability. It provides a new idea for the low-cost preparation of large-scale h-BN.

Keywords

• APCVD
• h-BN
• film
• photoelectric devices