Nanomaterials (Apr 2022)

Marked Efficiency Improvement of FAPb<sub>0.7</sub>Sn<sub>0.3</sub>Br<sub>3</sub> Perovskite Light-Emitting Diodes by Optimization of the Light-Emitting Layer and Hole-Transport Layer

  • Lufeng Hu,
  • Zhixiang Ye,
  • Dan Wu,
  • Zhaojin Wang,
  • Weigao Wang,
  • Kai Wang,
  • Xiangqian Cui,
  • Ning Wang,
  • Hongyu An,
  • Bobo Li,
  • Bingxi Xiang,
  • Mingxia Qiu

DOI
https://doi.org/10.3390/nano12091454
Journal volume & issue
Vol. 12, no. 9
p. 1454

Abstract

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Highly luminescent FAPb0.7Sn0.3Br3 nanocrystals with an average photoluminescence (PL) quantum yield of 92% were synthesized by the ligand-assisted reprecipitation method. The 41-nm-thick perovskite film with a smooth surface and strong PL intensity was proven to be a suitable luminescent layer for perovskite light-emitting diodes (PeLEDs). Electrical tests indicate that the double hole-transport layers (HTLs) played an important role in improving the electrical-to-optical conversion efficiency of PeLEDs due to their cascade-like level alignment. The PeLED based on poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,40-(N-(p-butylphenyl))-diphenylamine)] (TFB)/poly(9-vinylcarbazole) (PVK) double HTLs produced a high external quantum efficiency (EQE) of 9%, which was improved by approximately 10.9 and 5.14 times when compared with single HTL PVK or the TFB device, respectively. The enhancement of the hole transmission capacity by TFB/PVK double HTLs was confirmed by the hole-only device and was responsible for the dramatic EQE improvement.

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