Adsorption-controlled growth of homoepitaxial c-plane sapphire films

Abstract

Sapphire is a technologically highly relevant material, but it poses many challenges when performing epitaxial thin-film deposition. We have identified and applied the conditions for adsorption-controlled homoepitaxial growth of c-plane sapphire. The films thus grown are atomically smooth, have a controlled termination, and are of outstanding crystallinity. Their chemical purity exceeds that of the substrates. The films exhibit exceptional optical properties, such as a single-crystal-like bandgap and a low density of F+ centers.