A Novel 6500 V SiC Trench MOSFET with Integrated Unipolar Diode for Improved Third Quadrant and Switching Characteristics

Hao Wu; Xuan Li; Xiaochuan Deng; Yangyang Wu; Jiawei Ding; Wensong Peng; Bo Zhang

doi:10.3390/mi15010092

Micromachines (Dec 2023)

A Novel 6500 V SiC Trench MOSFET with Integrated Unipolar Diode for Improved Third Quadrant and Switching Characteristics

Hao Wu,
Xuan Li,
Xiaochuan Deng,
Yangyang Wu,
Jiawei Ding,
Wensong Peng,
Bo Zhang

Affiliations

Hao Wu: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Xuan Li: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Xiaochuan Deng: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Yangyang Wu: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Jiawei Ding: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Wensong Peng: Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen 518110, China
Bo Zhang: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

DOI: https://doi.org/10.3390/mi15010092
Journal volume & issue: Vol. 15, no. 1
p. 92

Abstract

Read online

A 6500 V SiC trench MOSFET with integrated unipolar diode (UD-MOS) is proposed to improve reverse conduction characteristics, suppress bipolar degradation, and reduce switching loss. An N type base region under the trench dummy gate provides a low barrier path to suppress hole injection during the reverse conduction operation. The reverse conduction voltage VON is reduced to 1.11 V, and the reverse recovery charge (QRR) is reduced to 1.22 μC/cm2. The gate-to-drain capacitance (CGD) and gate-to-source capacitance (CGS) of the UD-MOS are also reduced to improve switching loss due to the thick oxide layer between the trench gate and dummy gate. The proposed device exhibits an excellent loss-related figure of merit (FOM). It provides a high-voltage SiC MOSFET prototype with potential performance advantages for voltage source converter-based high voltage direct current applications.

Published in Micromachines

ISSN: 2072-666X (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Mechanical engineering and machinery
Website: https://www.mdpi.com/journal/micromachines

About the journal

Abstract

Keywords