All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature

Abstract

By using 2D materials heterostructures it is possible to exploit the properties of both materials at the interface, for instance, spin-dependent transport for application in spintronic devices. Here, using a heterostructure of MoTe2/Graphene the authors demonstrate a proximity induced spin-galvanic effect which can be controlled by the gate voltage.