Analysis of radiation effects of semiconductor devices based on numerical simulation Fermi–Dirac

Abstract

To study the radiation effect of Fermi–Dirac (F–D) semiconductor devices based on numerical simulation, two methods are used. One is based on the combination of F–D statistical method and computer simulation. The method discusses the influence of temperature and light energy on the carrier number by starting from an intrinsic silicon semiconductor and carries out computer simulation on the carrier number in intrinsic silicon semiconductor. TID Sim, a three-dimensional parallel solver for ionizing radiation effects of semiconductor devices, is developed. The ionization radiation damage of typical metal oxide semiconductor (MOS) FET NMOS and bipolar transistor GLPNP is simulated. It was proved that the variation trend was close to a straight line in the temperature range (278–358 K) studied in this article. The results are consistent with those of the statistical distribution of semiconductor carriers. This method is suitable for calculating the number of semiconductor carriers, and it is an effective method to study the problems related to carrier distribution.

Keywords

• f–d statistical method
• semiconductor
• radiation effect