A new theoretical technique to study the temperature variation of electrical conductivity as applied to α-quaterthiophene (α-4T) thin films

Abstract

α-4T thin films of various thicknesses are prepared by thermal evaporation method. The electrical conductivity (σ) of as deposited α-4T thin films of thicknesses 50 nm, 100 nm and 200 nm have been measured using Hall measurement system (HMS). Using the measured values of conductivity and energy gap, the constant σ0 has been estimated for thin films of various thicknesses. Thus, the electrical conductivity of the thin films of 50 nm, 100 nm and 200 nm have been estimated for various temperatures (T). Ln (σ) vs. 1000/T plots for thin films of various thicknesses have been drawn. The conductivity is found to decrease with increase in thickness of the thin film, as it changes from 50 nm to 200 nm.