Semiconductor image converter

Abstract

The structural scheme, band diagram, working principle and electrical properties of semiconductor image converter made with a p-n Si-ZnSe matrix structure are reviewed. It’s shown that the p-n Si-ZnSe photodiode array can be used as a sensing device and optical radiation introscopes.

Keywords

• полупроводниковый преобразователь
• матричная структура
• зонная диаграмма
• электрофизические свойства