Review on Short-Circuit Protection Methods for SiC MOSFETs

Abstract

SiC MOSFETs have been a game-changer in the domain of power electronics, thanks to their exceptional electrical traits. They are endowed with a high breakdown voltage, reduced on-resistance, and superior thermal conductivity, which make them supremely suitable for high-power and resilient applications across aviation, automotive, and renewable energy sectors. Despite their intrinsic advantages, SiC MOSFETs also necessitate advanced safeguarding mechanisms to counteract the vulnerability to short-circuit conditions due to their lower short-circuit robustness. This review paper offers an in-depth analysis of the array of short-circuit protection (SCP) methods applied to SiC MOSFETs. This paper scrutinizes techniques such as desaturation detection, di/dt detection, gate charge characteristics monitoring, two-dimensional monitoring, Rogowski coil-based detection, and two-stage turn-off strategies. The paper meticulously explores the operational principles, merits, and limitations of each method, with an emphasis on their adaptability to various fault types, including hard switching faults and load-induced faults. This review acts as a thorough compendium, guiding the choice of pertinent SCP strategies, ensuring the secure and efficient functioning of SiC MOSFETs in demanding applications.

Keywords

• silicon carbide (SiC) MOSFETs
• short-circuit detection
• short-circuit protection
• desaturation method
• d<i>i</i>/d<i>t</i> detection
• gate charge characteristics