Photoluminescence and Electrical Properties of n-Ce-Doped ZnO Nanoleaf/p-Diamond Heterojunction

Qinglin Wang; Yu Yao; Xianhe Sang; Liangrui Zou; Shunhao Ge; Xueting Wang; Dong Zhang; Qingru Wang; Huawei Zhou; Jianchao Fan; Dandan Sang

doi:10.3390/nano12213773

Nanomaterials (Oct 2022)

Photoluminescence and Electrical Properties of n-Ce-Doped ZnO Nanoleaf/p-Diamond Heterojunction

Qinglin Wang,
Yu Yao,
Xianhe Sang,
Liangrui Zou,
Shunhao Ge,
Xueting Wang,
Dong Zhang,
Qingru Wang,
Huawei Zhou,
Jianchao Fan,
Dandan Sang

Affiliations

Qinglin Wang: Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
Yu Yao: Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
Xianhe Sang: Ulsan Ship and Ocean College, Ludong University, Yantai 264000, China
Liangrui Zou: Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
Shunhao Ge: Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
Xueting Wang: Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
Dong Zhang: Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
Qingru Wang: Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
Huawei Zhou: School of Chemistry and Chemical Engineering, Liaocheng University, Liaocheng 252000, China
Jianchao Fan: Shandong Liaocheng Laixin Powder Materials Science and Technology Co., Ltd., Liaocheng 252000, China
Dandan Sang: Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China

DOI: https://doi.org/10.3390/nano12213773
Journal volume & issue: Vol. 12, no. 21
p. 3773

Abstract

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The n-type Ce:ZnO (NL) grown using a hydrothermal method was deposited on a p-type boron-doped nanoleaf diamond (BDD) film to fabricate an n-Ce:ZnO NL/p-BDD heterojunction. It shows a significant enhancement in photoluminescence (PL) intensity and a more pronounced blue shift of the UV emission peak (from 385 nm to 365 nm) compared with the undoped heterojunction (n-ZnO/p-BDD). The prepared heterojunction devices demonstrate good thermal stability and excellent rectification characteristics at different temperatures. As the temperature increases, the turn-on voltage and ideal factor (n) of the device gradually decrease. The electronic transport behaviors depending on temperature of the heterojunction at different bias voltages are discussed using an equilibrium band diagram and semiconductor theoretical model.

Published in Nanomaterials

ISSN: 2079-4991 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry
Website: https://www.mdpi.com/journal/nanomaterials

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