High responsivity and flexible deep-UV phototransistor based on Ta-doped β-Ga2O3

Abstract

Abstract Deep-ultraviolet (DUV) phototransistors have shown great potential applications in UV imaging, artificial intelligence, and wearable optoelectronics. Among a large number of wide bandgap semiconductors, the quasi-two-dimensional β-Ga2O3 is considered as an ideal candidate for DUV photodetector applications. Herein, we report a high responsivity (R) and fully flexible Ta-doped β-Ga2O3 DUV phototransistor which exhibits outstanding optoelectrical properties with a high R of 1.32 × 106 A/W, a large detectivity of 5.68 × 1014 Jones, a great photo-to-dark current ratio of 1.10 × 1010%, a high external quantum efficiency of 6.60 × 108%, and an ultra-fast response time of ~3.50 ms. Besides, the flexible Ta-doped β-Ga2O3 device also displays high reliability and mechanical flexibility that can sustain well after over 1 × 104 bending cycles. Moreover, high-contrast imaging of UV light was obtained on the flexible DUV detector arrays, which can be efficiently trained and recognized by an artificial neural network. Our findings offer a perspective to develop wearable optoelectronics and UV imaging based on high-performance flexible β-Ga2O3 DUV phototransistors, providing an inspiration for the future work in artificial intelligence and bionic robot fields.