High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation

Abstract

The current understanding of physical principles governing electronic transport in graphene field effect transistors (GFETs) has reached a level where we can model quite accurately device operation and predict intrinsic frequency limits of performance. In this work, we use this knowledge to analyze DC and RF transport properties of bottom-gated graphene on boron nitride field effect transistors exhibiting pronounced velocity saturation by substrate hyperbolic phonon polariton scattering, including Dirac pinch-off effect. We predict and demonstrate a maximum oscillation frequency exceeding 20   GHz . We discuss the intrinsic 0.1   THz limit of GFETs and envision plasma resonance transistors as an alternative for sub-THz narrow-band detection.

Keywords

• graphene transistor
• velocity saturation
• high-frequency
• dirac pinch-off
• contact gating