Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled pMOSFETs

Abstract

We examine the impact of negative bias temperature (NBT) stress on the fluctuations in ID and IG for deeply scaled pMOSFETs and find that the relative high NBT stress triggers IG-RTN and ID-step. Through the analysis of the field dependence of emission constant and the carrier separation measurement, it is found that under the relative high NBT stress some traps keep charged state for very long time, as observing step-like behaviors in ID, while other traps emit charged holes to the gate side through TAT process, which originate both ID-step and ID-RTN.