High-Power Supersymmetric Semiconductor Laser with a Narrow Linewidth

Abstract

We have designed and fabricated a kind of supersymmetric slotted Fabry–Perot semiconductor laser near 1550 nm to achieve a single-mode, high-power, and narrow-linewidth operation. The structure of the laser is composed of an electrically pumped broad ridge waveguide in the middle to provide optical gain, a group of periodic slots etched near the front facet to suppress the extra longitudinal modes and achieve a narrow linewidth, and a pair of passive superpartner waveguides located on both sides to filter out the high-order lateral modes in the broad waveguide. The device measured under the temperature of 25 °C shows an output power of 113 mW, a single-lobe lateral far-field distribution with the full width at half maximum of 7.8°, a peak wavelength of 1559.7 nm with the side-mode suppression ratio of 48.5 dB, and an intrinsic linewidth of 230 kHz at the bias current of 800 mA. The device is a promising candidate for cost-effective light sources for coherent communication systems and LiDARs.

Keywords

• supersymmetric semiconductor laser
• high power
• single mode
• narrow linewidth