Overhang Saddle Fin Sidewall Structure for Highly Reliable DRAM Operation

Abstract

A novel memory cell transistor structure based on a saddle fin-based DRAM is presented for highly reliable operations. The overhang saddle fin (oss-fin) active structure is formed by two steps of etching of the fin; isotropic etching for the short side and anisotropic etching for the long side of the fin. The overhang sidewall fin structure results in the increase of retention time, decrease of isolation leakage current, increase of rowhammering tolerance, and increase of programming efficiency. A Technology Computer-Aided Design (TCAD) simulation study compares the overhang and the conventional saddle fin (s-fin) in terms of those reliability parameters. A lowered electric field underneath the storage node, a lowered passing gate coupling capacitance, and an elongated isolation leakage path are attributed to the reliability enhancements in the overhang saddle fin.

Keywords

• Overhang saddle fin
• DRAM
• rowhammer
• retention time
• TCAD simulation