Electron g-factor in nanostructures: continuum media and atomistic approach

Abstract

Abstract We report studies of $${\varvec{k}}$$ k -dependent Landé g-factor, performed by both continuous media approximation $${\varvec{k}}{\varvec{\cdot }}{\varvec{p}}$$ k · p method, and atomistic tight-binding $$\hbox {sp}^3\hbox {d}^5\hbox {s}^*$$ sp 3 d 5 s ∗ approach. We propose an effective, mesoscopic model for InAs that we are able to successfully compare with atomistic calculations, for both very small and very large nanostructures, with a number of atoms reaching over 60 million. Finally, for nanostructure dimensions corresponding to near-zero g-factor we report electron spin states anti-crossing as a function of system size, despite no shape-anisotropy nor strain effects included, and merely due to breaking of atomistic symmetry of cation/anion planes constituting the system.