Wide-Bandgap Device Enabled Multilevel Converters With Simplified Structures and Capacitor Voltage Balancing Capability

Abstract

This paper aims to point out and demonstrate the opportunities enabled by wide-bandgap (WBG) devices for multilevel converters, contributing to the international technology roadmap for WBG power semiconductors (ITRW). The emergence of silicon carbide (SiC) and gallium nitride (GaN) devices offers new opportunities to push the boundaries of power converter performances. Featuring high single-device blocking voltage and ultra-low switching loss, WBG devices can enable a group of multilevel converters with simplified structures and a higher number of levels to be practically implemented in applications with various power levels. This paper highlights how the use of WBG devices can reduce the number of required devices in the simplified multilevel topologies, how the capacitor voltage balance can be achieved with the newly proposed redundant level modulation (RLM) enabled by the ultra-low switching loss of WBG devices and how the switching frequency and efficiency can be improved with WBG multilevel converters. A 1.2 kV/100 kW, three-phase demonstrator implemented with a simplified four-level active neutral point clamped (ANPC) structure and commercial SiC power modules is studied to show the opportunities brought by WBG devices for multilevel converters. A voltage balancing scheme based on the RLM and a power loss analysis are presented for this configuration.

Keywords

• Wide-bandgap
• silicon carbide (SiC)
• multilevel converters
• reduced device count
• capacitor voltage control
• redundant level modulation