Structural, Electronic and Optical Properties of Cu2GeS3. A First Principles Study

Abstract

In this paper, we have performed first-principles calculations on the structural and optoelectronic properties of Cu2GeS3 compound in the Cc and Imm2 structures. We have applied the linear augmented plane wave method for all electrons (FPLAPW), which is based on density functional theory (DFT) by using the local density approximation (LDA) and the Perdew-Burke-Ernzerhof (PBE) generalized gradient approximation (GGA). In addition, the modified Becke Johnson Tran and Blaha potential (TB-mBJ) combined with the Hubbard potential (U), which successfully corrects the band gap problem.

Keywords

• cu2ges3
• fp-lapw
• lda
• mbj
• dielectric function ε(ω)