Proceedings (Jun 2019)

Chemically Sensitive Photoluminescence of InGaN/GaN Nanowire Heterostructure Arrays

  • Konrad Maier,
  • Andreas Helwig,
  • Gerhard Müller,
  • Martin Eickhoff

DOI
https://doi.org/10.3390/proceedings2019014043
Journal volume & issue
Vol. 14, no. 1
p. 43

Abstract

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III-nitride semiconductors (AlGaN, GaN and InGaN) have received considerable attention in various fields ranging from high-frequency and high-temperature electronics [1] to LED lighting technologies [2]. [...]

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