Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure

Abstract

p–n junctions: unusual transfer characteristic p–n heterojunctions based on certain two-dimensional transition metal dichalcogenides display an unusual dip in the current–voltage characteristic. A team led by Anindya Das at the Indian Institute of Science in Bangalore fabricated p–n junctions made of few layers of MoTe2 and a single layer of MoS2 and observed an unexpected dip in the junction current as a function of the back gate voltage. The researchers could modulate the intensity and position of this dip feature by changing the power density of the incident light. They also performed theoretical calculations that qualitatively captured the behavior of the dip, which could be attributed to interface recombination of charge carriers. These findings further the understanding of the physics of thin-film interfaces, which can stimulate the improvement of devices.