APL Materials (Oct 2019)

Semicoherent oxide heterointerfaces: Structure, properties, and implications

  • Blas Pedro Uberuaga,
  • Pratik P. Dholabhai,
  • Ghanshyam Pilania,
  • Aiping Chen

DOI
https://doi.org/10.1063/1.5121027
Journal volume & issue
Vol. 7, no. 10
pp. 100904 – 100904-9

Abstract

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In the quest for enhanced functionality of all sorts, nanostructured materials are becoming ever more common. This is particularly true of oxide/oxide heterostructures in which the high density of interfaces has been implicated in enhanced properties and used to engineer strain in oxide composite structures. These interfaces are often characterized by a network of misfit dislocations that relieve the lattice mismatch strain between the two materials, and these dislocations themselves are often suggested as the source of either enhancements or degradation of properties. Despite the importance and pervasiveness of misfit dislocations, however, there is still much that is unknown about their structure and properties, particularly in oxide/oxide heterostructures. Here, we give a perspective on the importance of these dislocation networks and the need to interrogate their impact on functionality.