High CO performance of graphene oxide modified with CuCl by using “ion implantation” method

Abstract

Copper (I) chloride (CuCl) modified graphene oxide with different copper (Cu) content were prepared by ‘ion implantation’ method using CuCl as Cu source. The samples were characterized by x-ray Powder Diffraction-XRD, FTIR, BET, SEM, TEM, EDS and x-ray photoelectron spectroscopy-XPS. From TEM images and EDS elemental mapping, it showed the CuCl particles of 30–50 nm with high dispersion on graphene oxide surface. From XPS result, it revealed the presence of both Cu ^+ and Cu ^2+ ions but Cu ^+ ion amount was predominant. CO adsorption on CuCl modified graphene oxide with different Cu content was tested. Among tested CuCl modified GO samples, 2CuCl/GO sample exhibited the highest CO gas adsorption capacity of 2.9 mmol g ^−1 at 20 °C which was 7.5 times higher than that of pristine GO (0.38 mmol g ^−1 ). High CO adsorption performance on CuCl modified GO can be explained by the formation of π –complexation between CO molecules and Cu(I) ions. From CO adsorption on CuCl modified GO, it showed that the experimental data fit well with Langmuir- Freundlich model.

Keywords

• CuCl modified GO
• CO adsorption performance
• CO adsorption isotherms and Langmuir-Freudlich model