Broadband Polarization Rotator and Splitter Based on 70 nm-Etched Waveguides on SOI Platform

Abstract

The standard silicon photonic platforms provide three-step silicon etching, i.e., 220 nm for full etching, 70 nm for shallow etching, and 130 nm (or 150 nm) for slab etching. Previously reported mode-evolution-based polarization rotators and splitters (PSRs) usually employ 130 nm-etched slab waveguides for adiabatic TM0-to-TE1 conversion, however, they are not compatible with the platforms adopting 150 nm-etching techniques. In this paper, we demonstrate a broadband PSR based on 70 nm-etched slab waveguides, which is compatible with all the platforms. The PSR consists of a bi-level taper and an inverse-tapered coupler. The length of the polarization rotator shrinks from hundreds to only thirty microns by employing the 70 nm-etched slab waveguides, while a high efficiency of >95% is achieved, covering an ultra-wide bandwidth from 1250 nm to 1650 nm. The proposed PSR shows superior performance over S, C, and L bands. Low cross-talk of <−20 dB and a loss of <1.5 dB are experimentally confirmed over a wavelength range of 75 nm.

Keywords

• polarization delivery
• silicon photonics
• silicon passive devices