Advanced Electronic Materials (Oct 2023)
Tilted Magnetic Anisotropy with In‐Plane Broken Symmetry in Ru‐Substituted Manganite Films
Abstract
Abstract Controlling the magnetic anisotropy of materials is important in a variety of applications including magnetic memories, spintronic sensors, and skyrmion‐based devices. Ru‐substituted La0.7Sr0.3MnO3 (Ru‐LSMO) is an emerging material, showing tilted magnetic anisotropy (TMA) and possible nontrivial magnetic topologies. Here anisotropic in‐plane magnetization is reported in moderately compressed Ru‐LSMO films, coexisting with TMA. This combination is attractive for technological applications, such as spin‐orbit torque (SOT) based devices and other spintronic applications. A microstructural analysis of films of this material is presented, and Ru single ion anisotropy and strain‐induced structural mechanisms are found to be responsible for both the in‐plane anisotropy and the TMA. The manifestation of these properties in a correlated oxide with Curie temperature near room temperature highlights an attractive platform for technological realization of SOT and other spintronic devices. Illustrating the mechanisms behind these properties provides the necessary engineering space for harnessing these phenomena for practical devices.
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