Modeling of radiation effects at the physical and technological level in the IET CAD

Abstract

The article considers the issues of energy distribution and use management by means of modeling changes in the electrophysical characteristics of semico nductor structures under the influence of static radiation. The change in the main electrical parameters of transistor structures is given, such as, change in the concentration of the main charge carriers, change in specific resistance, change in the mobility of charge carriers, change in threshold voltage, change in the lifetime of charge carriers. Also in the article within the framework of changing other parameters of transistors the following calculations are carried out: change in the slope of the drain-gate characteristic, change in the leakage current in the drain circuit, thermal generation current, surface leakage current, change in input resistance.