MATEC Web of Conferences (Jan 2017)

Stability of Chlorine Termination on Ge(100) and Ge(111) Surfaces

  • Sahari Siti Kudnie,
  • Kashif Muhammad,
  • Sawawi Marini,
  • Nik Zaini Fathi Nik Amni Fathi,
  • Hamzah Azrul Azlan,
  • Majlis Burhanuddin Yeop,
  • Sutan Norsuzailina Muhammad,
  • Sapawi Rohana,
  • Kipli Kuryati,
  • Sawawi Marini,
  • Abdul Halim Nurul Atiqah,
  • Junaidi Nazreen,
  • Wan Masra Sharifah Masniah

DOI
https://doi.org/10.1051/matecconf/20178705005
Journal volume & issue
Vol. 87
p. 05005

Abstract

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The different cleaning solution; HCl and HF solution are used to remove the suboxide and oxide component on Ge surface. The HCl cleaning results chlorine (Cl) termination on Ge surface whereas no Fluorine (F) termination was observed just after HF cleaning. The growth of Ge oxide is studied after treated with HCl cleaning on two surface orientations; (100) and (111), respectively in dry oxygen ambient and cleanroom air by spectroscopic ellipsometry (SE) and x-ray photoelectron spectroscopy (XPS). A clear step and terrace trend was observed for the oxidation growth of Ge (100) and Ge (111) in dry oxygen ambient compared to in clean room air. This trend shows the difference in surface reaction of Ge oxidation as humidity varies. The stability of chlorine termination of Ge (111) than Ge (100) explains the slower growth of oxidation in dry oxygen ambient.