Design and Implementation of a Control Method for GaN-Based Totem-Pole Boost-Type PFC Rectifier in Energy Storage Systems

Nguyen-Nghia Do; Bing-Siang Huang; Nhat-Truong Phan; Tan-Tung Nguyen; Jian-Hong Wu; Yu-Chen Liu; Huang-Jen Chiu

doi:10.3390/en13236297

Energies (Nov 2020)

Design and Implementation of a Control Method for GaN-Based Totem-Pole Boost-Type PFC Rectifier in Energy Storage Systems

Nguyen-Nghia Do,
Bing-Siang Huang,
Nhat-Truong Phan,
Tan-Tung Nguyen,
Jian-Hong Wu,
Yu-Chen Liu,
Huang-Jen Chiu

Affiliations

Nguyen-Nghia Do: Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
Bing-Siang Huang: Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
Nhat-Truong Phan: Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
Tan-Tung Nguyen: Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
Jian-Hong Wu: Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
Yu-Chen Liu: Department of Electrical Engineering, National ILAN University, Yilan 260, Taiwan
Huang-Jen Chiu: Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan

DOI: https://doi.org/10.3390/en13236297
Journal volume & issue: Vol. 13, no. 23
p. 6297

Abstract

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With the unceasing advancement of wide-bandgap (WBG) semiconductor technology, the minimal reverse-recovery charge Qrr and other more powerful natures of WBG transistors enable totem-pole bridgeless power factor correction to become a dominant solution for energy storage systems (ESS). This paper focuses on the design and implementation of a control structure for a totem-pole boost PFC with newfangled enhancement-mode gallium nitride field-effect transistors (eGaN FETs), not only to simplify the control implementation but also to achieve high power quality and efficiency. The converter is designed to convert a 90–264-VAC input to a 385-VDC output for a 2.6-kW output power. Lastly, to validate the methodology, an experimental prototype is characterized and fabricated. The uttermost efficiency at 230 VAC reaches 99.14%. The lowest total harmonic distortion in the current (ITHD) at high line condition (230 V) attains 1.52% while the power factor gains 0.9985.

Published in Energies

ISSN: 1996-1073 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology
Website: http://www.mdpi.com/journal/energies

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