GERMANIUM LAYERS ON SILICON PRODUCED BY THERMAL CRYSTALLIZATION FROM A DISCRETE LIQUID SOURCE

Abstract

Features of a method of thermal crystallization from a discrete liquid source through a little vacuum zone to produce thin ilm Ge/Si heterostructures onto large substrates were investigated. It is established the obtaining conditions for growing of homogeneous in thickness layers. The temperature dependence of structural perfection of germanium layers on silicon substrates and the optimal technological conditions were found.

Keywords

• кремний-германиевые гетероструктуры
• термическая кристаллизация
• дискретный источник
• germanium-silicon heterostructures
• thermal crystallization
• discrete source