Reliability of computer memories in radiation environment

Fetahović Irfan S.; Dolićanin Edin Ć.; Lončar Boris B.; Kartalović Nenad M.

doi:10.2298/NTRP1603240F

Nuclear Technology and Radiation Protection (Jan 2016)

Reliability of computer memories in radiation environment

Fetahović Irfan S.,
Dolićanin Edin Ć.,
Lončar Boris B.,
Kartalović Nenad M.

Affiliations

Fetahović Irfan S.: State University of Novi Pazar, Novi Pazar
Dolićanin Edin Ć.: State University of Novi Pazar, Novi Pazar
Lončar Boris B.: Faculty of Technology and Metallurgy, Belgrade
Kartalović Nenad M.: Institute of Electrical Engineering “Nikola Tesla”, Belgrade

DOI: https://doi.org/10.2298/NTRP1603240F
Journal volume & issue: Vol. 31, no. 3
pp. 240 – 246

Abstract

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The aim of this paper is examining a radiation hardness of the magnetic (Toshiba MK4007 GAL) and semiconductor (AT 27C010 EPROM and AT 28C010 EEPROM) computer memories in the field of radiation. Magnetic memories have been examined in the field of neutron radiation, and semiconductor memories in the field of gamma radiation. The obtained results have shown a high radiation hardness of magnetic memories. On the other side, it has been shown that semiconductor memories are significantly more sensitive and a radiation can lead to an important damage of their functionality. [Projekat Ministarstva nauke Republike Srbije, br. 171007]

Published in Nuclear Technology and Radiation Protection

ISSN: 1451-3994 (Print); 1452-8185 (Online)
Publisher: VINCA Institute of Nuclear Sciences
Country of publisher: Serbia
LCC subjects: Science: Physics: Nuclear and particle physics. Atomic energy. Radioactivity
Website: http://www.doiserbia.nb.rs/journal.aspx?issn=1451-3994

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