Hydrothermal Growth of Quasi-Monocrystal ZnO Thin Films and Their Application in Ultraviolet Photodetectors

Yung-Chun Tu; Shui-Jinn Wang; Tseng-Hsing Lin; Chien-Hsiung Hung; Tsung-Che Tsai; Ru-Wen Wu; Kai-Ming Uang; Tron-Min Chen

doi:10.1155/2015/261372

International Journal of Photoenergy (Jan 2015)

Hydrothermal Growth of Quasi-Monocrystal ZnO Thin Films and Their Application in Ultraviolet Photodetectors

Yung-Chun Tu,
Shui-Jinn Wang,
Tseng-Hsing Lin,
Chien-Hsiung Hung,
Tsung-Che Tsai,
Ru-Wen Wu,
Kai-Ming Uang,
Tron-Min Chen

Affiliations

Yung-Chun Tu: Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
Shui-Jinn Wang: Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
Tseng-Hsing Lin: Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
Chien-Hsiung Hung: Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
Tsung-Che Tsai: Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
Ru-Wen Wu: Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
Kai-Ming Uang: Department of Electrical Engineering, Wu Feng University, Chiayi 621, Taiwan
Tron-Min Chen: Department of Electrical Engineering, Wu Feng University, Chiayi 621, Taiwan

DOI: https://doi.org/10.1155/2015/261372
Journal volume & issue: Vol. 2015

Abstract

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Quasi-monocrystal ZnO film grown using the hydrothermal growth method is used for the fabrication of Cu2O/ZnO heterojunction (HJ) ultraviolet photodetectors (UV-PDs). The HJ was formed via the sputtering deposition of p-type Cu2O onto hydrothermally grown ZnO film (HTG-ZnO-film). The effect of annealing temperature in the nitrogen ambient on the photoluminescence spectra of the synthesized ZnO film was studied. The optoelectronic properties of Cu2O/ZnO film with various Cu2O thicknesses (250–750 nm) under UV light (365 nm; intensity: 3 mW/cm2) were determined. The UV sensitivity of the HTG-ZnO-film-based UV-PDs and the sputtered ZnO-film-based UV-PDs were 55.6-fold (SHTG) and 8.8-fold (Ssputter), respectively. The significant gain in sensitivity (SHTG/Ssputter = 630%) of the proposed ZnO-film-based device compared to that for the device based on sputtered film can be attributed to the improved photoelectric properties of quasi-monocrystal ZnO film.

Published in International Journal of Photoenergy

ISSN: 1110-662X (Print); 1687-529X (Online)
Publisher: Wiley
Country of publisher: United Kingdom
LCC subjects: Technology: Mechanical engineering and machinery: Renewable energy sources
Website: https://onlinelibrary.wiley.com/journal/3837

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