Coexistence of two types of metal filaments in oxide memristors

D. Xu; X. N. Shangguan; S. M. Wang; H. T. Cao; L. Y. Liang; H. L. Zhang; J. H. Gao; W. M. Long; J. R. Wang; F. Zhuge

doi:10.1063/1.4976108

AIP Advances (Feb 2017)

Coexistence of two types of metal filaments in oxide memristors

D. Xu,
X. N. Shangguan,
S. M. Wang,
H. T. Cao,
L. Y. Liang,
H. L. Zhang,
J. H. Gao,
W. M. Long,
J. R. Wang,
F. Zhuge

Affiliations

D. Xu: School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
X. N. Shangguan: School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
S. M. Wang: Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
H. T. Cao: Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
L. Y. Liang: Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
H. L. Zhang: Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
J. H. Gao: Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
W. M. Long: Zhengzhou Research Institute of Mechanical Engineering, Zhengzhou 450001, China
J. R. Wang: School of Electronic and Information Engineering, Ningbo University of Technology, Ningbo 315211, China
F. Zhuge: Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

DOI: https://doi.org/10.1063/1.4976108
Journal volume & issue: Vol. 7, no. 2
pp. 025102 – 025102-6

Abstract

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One generally considers the conducting filament in ZnO-based valence change memristors (VCMs) as an aggregation of oxygen vacancies. Recently, the transmission electron microscopy observation showed the filament is composed of a Zn-dominated ZnOx. In this study, careful analysis of the temperature dependence of the ON state resistance demonstrates that the formation/rupture of a Zn filament is responsible for the resistive switching in ZnO VCMs. Cu/ZnO/Pt memristive devices can be operated in both VCM and ECM (electrochemical metallization memristor) modes by forming different metal filaments including Cu, Zn and a coexistence of these two filaments. The device operation can be reversibly switched between ECM and VCM modes. The dual mode operation capability of Cu/ZnO/Pt provides a wide choice of select devices for constructing memristive crossbar architectures.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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