Slater half-occupation technique revisited: the LDA-1/2 and GGA-1/2 approaches for atomic ionization energies and band gaps in semiconductors

Abstract

The very old and successful density-functional technique of half-occupation is revisited [J. C. Slater, Adv. Quant. Chem. 6, 1 (1972)]. We use it together with the modern exchange-correlation approximations to calculate atomic ionization energies and band gaps in semiconductors [L. G. Ferreira et al., Phys. Rev. B 78, 125116 (2008)]. Here we enlarge the results of the previous paper, add to its understandability, and show when the technique might fail. Even in this latter circumstance, the calculated band gaps are far better than those of simple LDA or GGA. As before, the difference between the Kohn-Sham ground state one-particle eigenvalues and the half-occupation eigenvalues is simply interpreted as the self-energy (not self-interaction) of the particle excitation. In both cases, that of atomic ionization energies and semiconductor band gaps, the technique is proven to be very worthy, because not only the results can be very precise but the calculations are fast and very simple.