Фізика і хімія твердого тіла (Sep 2017)

Chemical Treatment of CdTe and Solid Solution Zn<sub>x</sub>Cd<sub>1-x</sub>Te and Cd<sub>0.2</sub>Hg<sub>0.8</sub>Te and Aqueous Solutions of HNO<sub>3</sub>–НІ-Lactate Acid

  • E. E. Hvozdiyevskyy,
  • R. O. Denysyuk,
  • V. M. Tomashyk,
  • Z. F. Tomashyk

DOI
https://doi.org/10.15330/pcss.17.2.247-250
Journal volume & issue
Vol. 17, no. 2
pp. 247 – 250

Abstract

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The method of disk rotating kinetics of dissolution processes CdTe, Zn<sub>x</sub>Cd<sub>1-x</sub>Te and Cd<sub>0.2</sub>Hg<sub>0.8</sub>Te in yodvydilyayuchyh etching compositions HNO<sub>3</sub>-NO-lactate acid. The dependence of etching rate of said material concentration oxidizer and organic solvent. Optimized polishing compositions herbalists and modes chemical dynamic polishing of semiconductor materials studied. The influence of Zn and Hg content in the composition of solid solutions on the quality of the resulting surface etching mixtures.Keywords: semiconductor solid solutions, single crystal, herbalist, surface, chemical etching, polishing.