AIP Advances (Apr 2024)

A next-generation light-emitting device: ZOGAN LED with a heterogeneous p-layer composed of oxide and nitride semiconductors

  • Yung Ryel Ryu,
  • Sung Ki Hong,
  • E. Fred Schubert,
  • Dong-Min Jeon,
  • Dong-Soo Shin,
  • Jong-In Shim,
  • Sang-Mook Kim,
  • Jong Hyeob Baek

DOI
https://doi.org/10.1063/5.0192350
Journal volume & issue
Vol. 14, no. 4
pp. 045215 – 045215-6

Abstract

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We have developed a light-emitting device, called the ZOGAN light-emitting diode (LED). The ZOGAN LED is formed with the p-layer composed of both ZnO-based oxide and GaN-based nitride semiconductors. The ZOGAN LED shows the characteristics of light-emitting devices required for ultra-high-resolution displays.