Nature Communications (Mar 2022)
Dual-gated single-molecule field-effect transistors beyond Moore’s law
- Linan Meng,
- Na Xin,
- Chen Hu,
- Hassan Al Sabea,
- Miao Zhang,
- Hongyu Jiang,
- Yiru Ji,
- Chuancheng Jia,
- Zhuang Yan,
- Qinghua Zhang,
- Lin Gu,
- Xiaoyan He,
- Pramila Selvanathan,
- Lucie Norel,
- Stéphane Rigaut,
- Hong Guo,
- Sheng Meng,
- Xuefeng Guo
Affiliations
- Linan Meng
- Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular Engineering, Peking University
- Na Xin
- Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular Engineering, Peking University
- Chen Hu
- Center for the Physics of Materials and Department of Physics, McGill University
- Hassan Al Sabea
- Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes)-UMR 6226
- Miao Zhang
- Center of Single-Molecule Sciences, Institute of Modern Optics, Frontiers Science Center for New Organic Matter, College of Electronic Information and Optical Engineering, Nankai University
- Hongyu Jiang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
- Yiru Ji
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
- Chuancheng Jia
- Center of Single-Molecule Sciences, Institute of Modern Optics, Frontiers Science Center for New Organic Matter, College of Electronic Information and Optical Engineering, Nankai University
- Zhuang Yan
- Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular Engineering, Peking University
- Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
- Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
- Xiaoyan He
- Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes)-UMR 6226
- Pramila Selvanathan
- Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes)-UMR 6226
- Lucie Norel
- Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes)-UMR 6226
- Stéphane Rigaut
- Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes)-UMR 6226
- Hong Guo
- Center for the Physics of Materials and Department of Physics, McGill University
- Sheng Meng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
- Xuefeng Guo
- Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular Engineering, Peking University
- DOI
- https://doi.org/10.1038/s41467-022-28999-x
- Journal volume & issue
-
Vol. 13,
no. 1
pp. 1 – 6
Abstract
Conventional silicon-based transistors, which sit at the heart of every computer, are fast approaching the limit of miniaturisation. Here, Meng et al demonstrate a field-effect transistor composed of a single rutheniumdiarylethene molecule with large on/off ratio.
