Graphene Channel Electron-Multiplying Charge-Coupled Pixel

Munir Ali; Afshan Khaliq; Muhammad Abid Anwar; Jianhang Lv; Muhammad Malik; Tian Feng; Srikrishna Chanakya Bodepudi; Hongwei Guo; Khurram Shehzad; Zongwen Li; Yunfan Dong; Wei Liu; Huan Hu; Yuda Zhao; Bin Yu; Yang Xu

doi:10.1109/ACCESS.2023.3266339

IEEE Access (Jan 2023)

Affiliations

Munir Ali: State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
Afshan Khaliq: College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, China
Muhammad Abid Anwar: State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
Jianhang Lv: ORCiD; State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
Muhammad Malik: ORCiD; State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
Tian Feng: State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
Srikrishna Chanakya Bodepudi: ORCiD; State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
Hongwei Guo: ORCiD; State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
Khurram Shehzad: State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
Zongwen Li: State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
Yunfan Dong: ORCiD; State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
Wei Liu: ORCiD; State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
Huan Hu: ORCiD; State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
Yuda Zhao: State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
Bin Yu: State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
Yang Xu: ORCiD; State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China

DOI: https://doi.org/10.1109/ACCESS.2023.3266339
Journal volume & issue: Vol. 11
pp. 37424 – 37436

Abstract

Read online

This work presents an in-situ readout of the transient photoresponse of a graphene-oxide-semiconductor heterostructure by utilizing graphene’s field-effect coupling with the silicon photogate. The reported device which acts as a graphene charge-coupled device (GCCD) pixel is set into pre-avalanche condition by dynamic sinusoidal biasing and then exposed with pulsed illumination. The initial photo-ionized charge packet experiences pre-integration carrier multiplication, boosting the signal-to-noise ratio (SNR) before interacting with the surface traps and defects. The maximum multiplication factor of $\mathrm {\sim }8.5$ and responsivity of $\mathrm {350 A/W}$ are achieved. Arrhenius plots show the viability of operating the device at room temperature as thermal charge contribution is negligible. Moreover, a detailed discussion on reduced power consumption for such a sinusoidal charge-coupled device (CCD) drive concept is also incorporated. The presented technique paves the way for futuristic sinusoidally-driven graphene-silicon-based electron-multiplying CCDs with low-power surveillance and adaptive optics applications.

Published in IEEE Access

ISSN: 2169-3536 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6287639

About the journal

Abstract

Keywords