Electronic Materials (Apr 2022)

Lead-Free BiFeO<sub>3</sub> Thin Film: Ferroelectric and Pyroelectric Properties

  • Mihaela Botea,
  • Cristina Chirila,
  • Georgia Andra Boni,
  • Iuliana Pasuk,
  • Lucian Trupina,
  • Ioana Pintilie,
  • Luminiţa Mirela Hrib,
  • Becherescu Nicu,
  • Lucian Pintilie

DOI
https://doi.org/10.3390/electronicmat3020015
Journal volume & issue
Vol. 3, no. 2
pp. 173 – 184

Abstract

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The ferroelectric and pyroelectric properties of bismuth ferrite (BFO) epitaxial thin film have been investigated. The ferroelectric epitaxial thin layer has been deposited on strontium titanate (STO) (001) substrate by pulsed laser deposition, in a capacitor geometry using as top and bottom electrode a conductive oxide of strontium ruthenate (SRO). The structural characterizations performed by X-ray diffraction and atomic force microscopy demonstrate the epitaxial character of the ferroelectric thin film. The macroscopic ferroelectric characterization of BFO revealed a rectangular shape of a polarization-voltage loop with a remnant polarization of 30 μC/c m2 and a coercive electric field of 633 KV/cm at room temperature. Due to low leakage current, the BFO capacitor structure could be totally pooled despite large coercive fields. A strong variation of polarization is obtained in 80–400 K range which determines a large pyroelectric coefficient of about 10−4 C/m2 K deduced both by an indirect and also by a direct method.

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