Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy

Shuo-Ting You; Ikai Lo; Jenn-Kai Tsai; Cheng-Hung Shih

doi:10.1063/1.4937132

AIP Advances (Dec 2015)

Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy

Shuo-Ting You,
Ikai Lo,
Jenn-Kai Tsai,
Cheng-Hung Shih

Affiliations

Shuo-Ting You: Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
Ikai Lo: Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
Jenn-Kai Tsai: Department of Electronic Engineering, National Formosa University, Yunlin 632, Taiwan
Cheng-Hung Shih: Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

DOI: https://doi.org/10.1063/1.4937132
Journal volume & issue: Vol. 5, no. 12
pp. 127201 – 127201-6

Abstract

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We have studied the GaN grown on ZnO micro-rods by plasma-assisted molecular beam epitaxy. From the analyses of GaN microstructure grown on non-polar M-plane ZnO surface ( 10 1 ̄ 0 ) by scanning transmission electron microscope, we found that the ZnGa2O4 compound was formed at the M-plane hetero-interface, which was confirmed by polarization-dependent photoluminescence. We demonstrated that the M-plane ZnO micro-rod surface can be used as an alternative substrate to grow high quality M-plane GaN epi-layers.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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