Ultrafast non-excitonic valley Hall effect in MoS2/WTe2 heterobilayers

Jekwan Lee; Wonhyeok Heo; Myungjun Cha; Kenji Watanabe; Takashi Taniguchi; Jehyun Kim; Soonyoung Cha; Dohun Kim; Moon-Ho Jo; Hyunyong Choi

doi:10.1038/s41467-021-21013-w

Nature Communications (Mar 2021)

Ultrafast non-excitonic valley Hall effect in MoS2/WTe2 heterobilayers

Jekwan Lee,
Wonhyeok Heo,
Myungjun Cha,
Kenji Watanabe,
Takashi Taniguchi,
Jehyun Kim,
Soonyoung Cha,
Dohun Kim,
Moon-Ho Jo,
Hyunyong Choi

Affiliations

Jekwan Lee: Department of Physics and Astronomy, Seoul National University
Wonhyeok Heo: Institute of Applied Physics, Seoul National University
Myungjun Cha: Department of Physics and Astronomy, Seoul National University
Kenji Watanabe: Advanced Materials Laboratory, National Institute for Materials Science
Takashi Taniguchi: Advanced Materials Laboratory, National Institute for Materials Science
Jehyun Kim: Department of Physics and Astronomy, Seoul National University
Soonyoung Cha: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science
Dohun Kim: Department of Physics and Astronomy, Seoul National University
Moon-Ho Jo: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science
Hyunyong Choi: Department of Physics and Astronomy, Seoul National University

DOI: https://doi.org/10.1038/s41467-021-21013-w
Journal volume & issue: Vol. 12, no. 1
pp. 1 – 6

Abstract

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The valley Hall effect in 2D materials is a promising approach for future valleytronic applications, but it is usually based on excitons with short lifetimes. Here, spin polarized electrons are injected from WTe2 into MoS2, leading to a unipolar valley Hall effect with enhanced lifetimes and mobility.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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