Magnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductor

Hakjoon Lee; Jihoon Chang; Phunvira Chongthanaphisut; Sangyeop Lee; Seonghoon Choi; Seul-Ki Bac; Alviu R. Nasir; Sanghoon Lee; A. Pardo; Sining Dong; X. Li; X. Liu; J. K. Furdyna; M. Dobrowolska

doi:10.1063/1.4972856

AIP Advances (May 2017)

Magnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductor

Hakjoon Lee,
Jihoon Chang,
Phunvira Chongthanaphisut,
Sangyeop Lee,
Seonghoon Choi,
Seul-Ki Bac,
Alviu R. Nasir,
Sanghoon Lee,
A. Pardo,
Sining Dong,
X. Li,
X. Liu,
J. K. Furdyna,
M. Dobrowolska

Affiliations

Hakjoon Lee: Physics Department, Korea University, Seoul 136-701, South Korea
Jihoon Chang: Physics Department, Korea University, Seoul 136-701, South Korea
Phunvira Chongthanaphisut: Physics Department, Korea University, Seoul 136-701, South Korea
Sangyeop Lee: Physics Department, Korea University, Seoul 136-701, South Korea
Seonghoon Choi: Physics Department, Korea University, Seoul 136-701, South Korea
Seul-Ki Bac: Physics Department, Korea University, Seoul 136-701, South Korea
Alviu R. Nasir: Physics Department, Korea University, Seoul 136-701, South Korea
Sanghoon Lee: Physics Department, Korea University, Seoul 136-701, South Korea
A. Pardo: Physics Department, Universidad del Atlantico, Km 7 Antigua via a Puerto Colombia, Barranquilla, Colombia
Sining Dong: Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA
X. Li: Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA
X. Liu: Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA
J. K. Furdyna: Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA
M. Dobrowolska: Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA

DOI: https://doi.org/10.1063/1.4972856
Journal volume & issue: Vol. 7, no. 5
pp. 055809 – 055809-6

Abstract

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We report a systemeatic investigation of magnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductor films by magneto-transport. Hall measurements showed a transition of the easy magnetization direction from in-plane to out-of plane with incorporation of the P into the GaMnAs films. Quantitative information on magnetic anisotropy of the films is obtained by fitting the angular dependence of Hall resistance data to magnetic free energy using the coherent rotation model. Values of magnetic anisotropy parameters show that in-plane anisotropy decreases and out-of-plane anisotropy increases with increasing P content in these films. The out-of-plane magnetic anisotropy in GaMnAsP layers is further enhanced by low temperature annealing. By optimizing the growth and annealing conditions, we were able to obtain a Curie temperature of 125 K in such quaternary films, with strong out-of-plane anisotropy. This study showed that the magnetic anisotropy of the GaMnAsP films can be controlled by adjusting the concentration of the P, and by appropriate post-growth annealing.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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