High efficiency silicon solar cells with back ZnTe layer hosting IPV effect: a numerical case study

Abstract

To get enhanced long-wavelength absorption, an impurity photovoltaic (IPV) mechanism was implemented within a transparent conducting oxide (TCO) at the rear of a solar cell. The numerical simulation of the N+/P (silicon)/IPV-TCO device was carried out by using SCAPS-1D program which allows the inclusion of optically active defects. In the proposed heterostructure configuration, ZnTe is a suitable material as back surface reflector. In analyzing the Si/ZnTe interface, lattice mismatch, energy band alignment and defects density were considered with appropriate treatment. In particular, to cure the detrimental 12% lattice mismatch at the interface, a thin silicon amorphous layer was inserted in-between, allowing 22.98% conversion efficiency. With adapted ZnTe Lucovsky's model for the optical capture cross sections and introduction of an oxygen radiative IPV defect (O2 level at 0.4 eV below the conduction band), a conversion efficiency of 27.15% was ultimately achieved. The experimental feasibility of the high-efficiency heterostructure device is evaluated.

Keywords

• silicon solar cell
• impurity photovoltaic effect
• znte:o
• scaps simulator