Numerical and Experimental Demonstration of a Silicon Nitride-Based Ring Resonator Structure for Refractive Index Sensing

Abstract

In optical communication and sensing, silicon nitride (SiN) photonics plays a crucial role. By adeptly guiding and manipulating light on a silicon-based platform, it facilitates the creation of compact and highly efficient photonic devices. This, in turn, propels advancements in high-speed communication systems and enhances the sensitivity of optical sensors. This study presents a comprehensive exploration wherein we both numerically and experimentally display the efficacy of a SiN-based ring resonator designed for refractive index sensing applications. The device’s sensitivity, numerically estimated at approximately 110 nm/RIU, closely aligns with the experimental value of around 112.5 nm/RIU. The RR sensor’s Q factor and limit of detection (LOD) are 1.7154 × 104 and 7.99 × 10−4 RIU, respectively. These congruent results underscore the reliability of the two-dimensional finite element method (2D-FEM) as a valuable tool for accurately predicting and assessing the device’s performance before fabrication.

Keywords

• silicon nitride
• ring resonator
• refractive index sensor
• integrated photonics
• finite element method
• reactive ion etching