Protocol for doping of an Sn-based two-dimensional perovskite semiconductor by incorporating SnI4 for field-effect transistors and thermoelectric devices

Abstract

Summary: Doping is an important technique for semiconductor materials, yet effective and controllable doping of organic-inorganic halide perovskites is still a challenge. Here, we present a protocol to dope 2D perovskite (PEA)2SnI4 by incorporating SnI4 in the precursor solutions. We detail steps for preparation of field-effect transistors (FETs) and thermoelectric devices (TEs) based on SnI4-doped (PEA)2SnI4 films. We further describe characterization via conductivity measurement using the four-point probe method, FETs performance, and TEs performance measurements.For complete details on the use and execution of this protocol, please refer to Liu et al. (2022).1 : Publisher’s note: Undertaking any experimental protocol requires adherence to local institutional guidelines for laboratory safety and ethics.

Keywords

• Physics
• Material sciences