AIP Advances (Dec 2012)

Anisotropic magnetoresistance in topological insulator Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures

  • B. Xia,
  • P. Ren,
  • Azat Sulaev,
  • Z. P. Li,
  • P. Liu,
  • Z. L. Dong,
  • L. Wang

DOI
https://doi.org/10.1063/1.4769894
Journal volume & issue
Vol. 2, no. 4
pp. 042171 – 042171-11

Abstract

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Topological insulator is composed of an insulating bulk state and time reversal symmetry protected two-dimensional surface states. One of the characteristics of the surface states is the locking between electron momentum and spin orientation. Here, we report a novel in-plane anisotropic magnetoresistance in topological insulator Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures. To explain the novel effect, we propose that the Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructure forms a spin-valve or Giant magnetoresistance device due to spin-momentum locking. The novel in-plane anisotropic magnetoresistance can be explained as a Giant magnetoresistance effect of the Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures.