RTN and Annealing Related to Stress and Temperature in FIND RRAM Array

Chih Yuan Chen; Chrong Jung Lin; Ya-Chin King

doi:10.1186/s11671-018-2846-1

Nanoscale Research Letters (Jan 2019)

RTN and Annealing Related to Stress and Temperature in FIND RRAM Array

Chih Yuan Chen,
Chrong Jung Lin,
Ya-Chin King

Affiliations

Chih Yuan Chen: Institute of Electronics Engineering, National Tsing Hua University
Chrong Jung Lin: Institute of Electronics Engineering, National Tsing Hua University
Ya-Chin King: Institute of Electronics Engineering, National Tsing Hua University

DOI: https://doi.org/10.1186/s11671-018-2846-1
Journal volume & issue: Vol. 14, no. 1
pp. 1 – 7

Abstract

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Abstract In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress. After undergoing cycling stress, RRAM cells have a stronger tendency to show more frequent and intense RTN signals. The increase of noise levels in FIND RRAM cells can be alleviated generally by high temperature anneal, and with this concept, an on chip annealing scheme is proposed and demonstrated.

Published in Nanoscale Research Letters

ISSN: 1931-7573 (Print); 1556-276X (Online)
Publisher: SpringerOpen
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.springer.com/journal/11671

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