Journal of Information Display (Oct 2020)
Improving the performances of oxide phototransistors using a mechanochemically treated porous visible-light absorption layer
Abstract
In this research, the use of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with a porous oxide layer (POL) resulting from the mechanochemical treatment of spin-coated oxide films is suggested for the detection of visible light. Mechanochemical treatment is a new technique that uses cellophane tape to induce the selective formation of hydrophobic dots on the surface of the a-IGZO. These dots interfere with the deposition of the film during spin coating, resulting in pore formation. The IGZO TFT with a POL exhibits 341.32 A/W photoresponsivity, 1.10 × 106 photosensitivity, and 4.54 × 1010 Jones detectivity under 532 nm light illumination.
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